- Home
- Search Results
- Page 1 of 1
Search for: All records
-
Total Resources2
- Resource Type
-
00020
- Availability
-
20
- Author / Contributor
- Filter by Author / Creator
-
-
Letton, Joshua (2)
-
Simin, Grigory (2)
-
Ahmed, Fiaz (1)
-
Chandrashekhar, M. V. (1)
-
Chandrashekhar, MVS (1)
-
Gaevski, Mikhail (1)
-
Greytak, Andrew B. (1)
-
Hussain, Kamal (1)
-
Jewel, Mohi Uddin (1)
-
Kelley, Mathew L. (1)
-
Khan, Asif (1)
-
Love-Baker, Cole A. (1)
-
Mamun, Abdullah (1)
-
Mollah, Shahab (1)
-
#Tyler Phillips, Kenneth E. (0)
-
#Willis, Ciara (0)
-
& Abreu-Ramos, E. D. (0)
-
& Abramson, C. I. (0)
-
& Abreu-Ramos, E. D. (0)
-
& Adams, S.G. (0)
-
- Filter by Editor
-
-
& Spizer, S. M. (0)
-
& . Spizer, S. (0)
-
& Ahn, J. (0)
-
& Bateiha, S. (0)
-
& Bosch, N. (0)
-
& Brennan K. (0)
-
& Brennan, K. (0)
-
& Chen, B. (0)
-
& Chen, Bodong (0)
-
& Drown, S. (0)
-
& Ferretti, F. (0)
-
& Higgins, A. (0)
-
& J. Peters (0)
-
& Kali, Y. (0)
-
& Ruiz-Arias, P.M. (0)
-
& S. Spitzer (0)
-
& Spitzer, S. (0)
-
& Spitzer, S.M. (0)
-
(submitted - in Review for IEEE ICASSP-2024) (0)
-
- (0)
-
-
Have feedback or suggestions for a way to improve these results?
!
Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
We report an Ultrawide Bandgap Al0.4Ga0.6N channel Metal-Oxide-Semiconductor Heterostructure field effect transistor with drain currents exceeding 1.33 A/mm (pulse) and 1.17A/mm (DC), around 2-fold increase over reported for AlGaN HFETs. The increase was achieved by incorporating hybrid barrier layer consisting of an AlN spacer, n-doped Al0.6Ga0.4N barrier and a thin reverse graded AlxGa1-xN (x from 0.60 to 0.30) cap layer. To enhance current spreading, a "perforated" channel layout comprising of narrow channel sections separated by current blocking islands was used. A composite ALD deposited ZrO2/Al2O3 film was used as gate dielectric. A breakdown field above 2MV/cm was measured.more » « less
-
Kelley, Mathew L. ; Letton, Joshua ; Simin, Grigory ; Ahmed, Fiaz ; Love-Baker, Cole A. ; Greytak, Andrew B. ; Chandrashekhar, M. V. ( , ACS Applied Electronic Materials)